Invention Grant
US09508712B2 Semiconductor device with a multiple nanowire channel structure and methods of variably connecting such nanowires for current density modulation
有权
具有多纳米线通道结构的半导体器件和用于电流密度调制可变地连接这种纳米线的方法
- Patent Title: Semiconductor device with a multiple nanowire channel structure and methods of variably connecting such nanowires for current density modulation
- Patent Title (中): 具有多纳米线通道结构的半导体器件和用于电流密度调制可变地连接这种纳米线的方法
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Application No.: US14146075Application Date: 2014-01-02
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Publication No.: US09508712B2Publication Date: 2016-11-29
- Inventor: Jeremy Austin Wahl , Nicholas Vincent LiCausi
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8234 ; H01L23/34 ; H01L29/423 ; H01L29/66 ; H01L29/775 ; H01L29/06
Abstract:
A nanowire device is disclosed that includes first and second nanowires, a gate structure positioned around a portion of the first and second nanowires and a phase change material surrounding at least a portion of the first nanowire in the source/drain regions of the device but not surrounding the second nanowire in the source/drain regions.
Public/Granted literature
Information query
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