Invention Grant
- Patent Title: Stacked graphene field-effect transistor
- Patent Title (中): 堆叠石墨烯场效应晶体管
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Application No.: US14591988Application Date: 2015-01-08
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Publication No.: US09508801B2Publication Date: 2016-11-29
- Inventor: Aaron D. Franklin , Hiroyuki Miyazoe , Satoshi Oida , Joshua T. Smith
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Daniel R. Simek
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/16 ; H01L29/786 ; H01L21/02 ; H01L21/04 ; H01L29/66 ; H01L29/45 ; H01L29/49
Abstract:
In an aspect of the present invention, a graphene field-effect transistor (GFET) structure is formed. The GFET structure comprises a wider portion and a narrow extension portion extending from the wider portion that includes one or more graphene layers edge contacted to source and drain contacts, wherein the source and drain contacts are self-aligned to the one or more graphene layers.
Public/Granted literature
- US20160204204A1 STACKED GRAPHENE FIELD-EFFECT TRANSISTOR Public/Granted day:2016-07-14
Information query
IPC分类:
