Invention Grant
- Patent Title: Semiconductor device and method for producing semiconductor device
- Patent Title (中): 半导体装置及半导体装置的制造方法
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Application No.: US14400101Application Date: 2013-05-10
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Publication No.: US09508803B2Publication Date: 2016-11-29
- Inventor: Yuki Nakano , Ryota Nakamura
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Hamre, Schumann, Mueller & Larson, P.C.
- Priority: JP2012-109950 20120511
- International Application: PCT/JP2013/063160 WO 20130510
- International Announcement: WO2013/168796 WO 20131114
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/336 ; H01L29/06 ; H01L29/40 ; H01L29/16 ; H01L29/45 ; H01L29/66 ; H01L23/00 ; H01L21/283 ; H01L29/10 ; H01L29/808 ; H01L29/417 ; H01L29/739 ; H01L23/495 ; H01L25/18
Abstract:
[Problem] To provide a semiconductor device in which the surface of a metal electrode arranged on the outermost surface can be made flat or smooth, and a method for producing said semiconductor device.[Solution] This semiconductor device (1) comprises: an SiC epitaxial layer (3) that has an uneven shape formed, on the basis of a height difference (H1), on the outermost surface where a semiconductor element (MOSFET) is arranged; and a source electrode (13) made of a metal material and formed on the SiC epitaxial layer (3). A polysilicon layer (12) having a surface (121) that is smoother than said uneven shape is provided between the surface (31) of the SiC epitaxial layer (3) and the source electrode (13).
Public/Granted literature
- US20150123148A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE Public/Granted day:2015-05-07
Information query
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