Invention Grant
- Patent Title: Nanochannel array of nanowires for resistive memory devices
- Patent Title (中): 用于电阻式存储器件的纳米线纳米通道阵列
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Application No.: US14784482Application Date: 2013-05-15
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Publication No.: US09508928B2Publication Date: 2016-11-29
- Inventor: Shih-Yuan Wang , Jianhua Yang
- Applicant: Hewlett-Packard Development Company, L.P.
- Applicant Address: US TX Houston
- Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee: Hewlett Packard Enterprise Development LP
- Current Assignee Address: US TX Houston
- Agency: Hewlett Packard Enterprise Development LP
- International Application: PCT/US2013/041069 WO 20130515
- International Announcement: WO2014/185897 WO 20141120
- Main IPC: H01L45/00
- IPC: H01L45/00 ; H01L27/24
Abstract:
A resistive memory structure includes two electrodes sandwiching an insulating region. The structure further includes a nanochannel array providing a conducting path between the two electrodes. The nanochannel array includes a plurality of nanowires that extends from one electrode to the other.
Public/Granted literature
- US20160056377A1 NANOCHANNEL ARRAY OF NANOWIRES FOR RESISTIVE MEMORY DEVICES Public/Granted day:2016-02-25
Information query
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