Invention Grant
- Patent Title: Method for manufacturing light-emitting device
- Patent Title (中): 发光装置的制造方法
-
Application No.: US13960998Application Date: 2013-08-07
-
Publication No.: US09508961B2Publication Date: 2016-11-29
- Inventor: Yoshiharu Hirakata , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP2012-178810 20120810
- Main IPC: H01L51/56
- IPC: H01L51/56 ; H01L51/00 ; H01L51/52 ; H04M1/02
Abstract:
To provide a method for manufacturing a lightweight light-emitting device having a light-emitting region on a curved surface. The light-emitting region is provided on a curved surface in such a manner that a light-emitting element is formed on a flexible substrate supported in a plate-like shape and the flexible substrate deforms or returns.
Public/Granted literature
- US20140045283A1 Method for Manufacturing Light-Emitting Device Public/Granted day:2014-02-13
Information query
IPC分类:
