Invention Grant
- Patent Title: MOSFET bridge circuit
- Patent Title (中): MOSFET桥接电路
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Application No.: US14593691Application Date: 2015-01-09
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Publication No.: US09509227B2Publication Date: 2016-11-29
- Inventor: Joseph A. Yedinak , Scott Pearson , Mark L. Rinehimer , Sungjin Kuen
- Applicant: Fairchild Semiconductor Corporation
- Applicant Address: US CA San Jose
- Assignee: Fairchild Semiconductor Corporation
- Current Assignee: Fairchild Semiconductor Corporation
- Current Assignee Address: US CA San Jose
- Agency: Brake Hughes Bellermann LLP
- Main IPC: H02M7/06
- IPC: H02M7/06 ; H02M7/23

Abstract:
In a general aspect, a bridge circuit can include a first bridge including a first plurality of MOSFETs and including a first input terminal and a second input terminal, and a second bridge including a second plurality of MOSFETs and including a third input terminal and a fourth input terminal. The first bridge and the second bridge can be coupled in parallel and being coupled to a first load terminal and a second load terminal.
Public/Granted literature
- US20150194906A1 MOSFET BRIDGE CIRCUIT Public/Granted day:2015-07-09
Information query
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