Invention Grant
- Patent Title: Concurrent multi-band radio frequency amplifying circuit
- Patent Title (中): 并发多频段射频放大电路
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Application No.: US14486555Application Date: 2014-09-15
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Publication No.: US09509262B2Publication Date: 2016-11-29
- Inventor: Nack Gyun Seong
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2014-0007880 20140122
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F3/193 ; H03F1/56 ; H03F3/21

Abstract:
A concurrent multi-band RF amplifying circuit may include: an input impedance matching unit performing impedance matching on each of first and second band signals included in an input signal input through one input terminal; an input amplifying unit including first and second band amplifying units each amplifying the first and second band signals input through the input impedance matching unit; a common ground circuit unit connected between a first common node commonly connected to the first and second band amplifying unit and a ground and including an impedance device for matching of an input impedance; and an output amplifying unit amplifying signals from each of the first and second band amplifying units.
Public/Granted literature
- US20150207474A1 CONCURRENT MULTI-BAND RADIO FREQUENCY AMPLIFYING CIRCUIT Public/Granted day:2015-07-23
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