Invention Grant
- Patent Title: Bias sampling device and CMOS image sensor including the same
- Patent Title (中): 偏置采样装置和CMOS图像传感器包括相同的
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Application No.: US14559489Application Date: 2014-12-03
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Publication No.: US09509928B2Publication Date: 2016-11-29
- Inventor: Woong-Hee Lee
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2014-0054890 20140508
- Main IPC: H04N5/357
- IPC: H04N5/357 ; H04N5/365 ; H04N5/374 ; H04N5/3745 ; H04N5/378

Abstract:
A bias sampling device includes a reference current generation unit suitable for generating a reference current; a plurality of multi-staged current mirror circuits suitable for receiving the reference current generated from the reference current generation unit and outputting a bias voltage; and a bias sampling unit suitable for performing sampling on a first bias voltage of a first current mirror circuit of the plurality of multi-staged current mirror circuits, wherein the first bias voltage of the first current mirror circuit, which is located prior to a final-staged current mirror circuit of the plurality of multi-staged current mirror circuits, is preset.
Public/Granted literature
- US20150326804A1 BIAS SAMPLING DEVICE AND CMOS IMAGE SENSOR INCLUDING THE SAME Public/Granted day:2015-11-12
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