Invention Grant
US09519298B2 Multi-junction semiconductor circuit and method 有权
多结半导体电路及方法

  • Patent Title: Multi-junction semiconductor circuit and method
  • Patent Title (中): 多结半导体电路及方法
  • Application No.: US14664562
    Application Date: 2015-03-20
  • Publication No.: US09519298B2
    Publication Date: 2016-12-13
  • Inventor: Ananthasayanam Chellappa
  • Applicant: NXP B.V.
  • Applicant Address: NL Eindhoven
  • Assignee: NXP B.V.
  • Current Assignee: NXP B.V.
  • Current Assignee Address: NL Eindhoven
  • Main IPC: H03B1/00
  • IPC: H03B1/00 H03K3/00 G05F1/10
Multi-junction semiconductor circuit and method
Abstract:
Aspects of the present disclosure are directed to methods, apparatuses and systems involving a multi junction semiconductor circuit. According to an example embodiment, an apparatus includes a multi junction semiconductor circuit including a first current path and a second current path, each current path having respective first and second common voltage nodes to provide an output that is proportional to absolute temperature. The first current path includes a first p-n junction exhibiting a first current density. The second current path includes a second p-n junction exhibiting a second current density that is proportionally different than the first current density, and a resistor connected between the second p-n junction and the second common voltage node. Further, the apparatus includes a current-tap path connected to a node between the resistor and the second p-n junction, the current-tap path diverts a portion of current that flows through the resistor away from the second p-n junction.
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