Invention Grant
- Patent Title: Multi-junction semiconductor circuit and method
- Patent Title (中): 多结半导体电路及方法
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Application No.: US14664562Application Date: 2015-03-20
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Publication No.: US09519298B2Publication Date: 2016-12-13
- Inventor: Ananthasayanam Chellappa
- Applicant: NXP B.V.
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Main IPC: H03B1/00
- IPC: H03B1/00 ; H03K3/00 ; G05F1/10

Abstract:
Aspects of the present disclosure are directed to methods, apparatuses and systems involving a multi junction semiconductor circuit. According to an example embodiment, an apparatus includes a multi junction semiconductor circuit including a first current path and a second current path, each current path having respective first and second common voltage nodes to provide an output that is proportional to absolute temperature. The first current path includes a first p-n junction exhibiting a first current density. The second current path includes a second p-n junction exhibiting a second current density that is proportionally different than the first current density, and a resistor connected between the second p-n junction and the second common voltage node. Further, the apparatus includes a current-tap path connected to a node between the resistor and the second p-n junction, the current-tap path diverts a portion of current that flows through the resistor away from the second p-n junction.
Public/Granted literature
- US20160274604A1 MULTI-JUNCTION SEMICONDUCTOR CIRCUIT AND METHOD Public/Granted day:2016-09-22
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