Invention Grant
US09520272B2 Microwave emission mechanism, microwave plasma source and surface wave plasma processing apparatus
有权
微波发射机制,微波等离子体源和表面波等离子体处理装置
- Patent Title: Microwave emission mechanism, microwave plasma source and surface wave plasma processing apparatus
- Patent Title (中): 微波发射机制,微波等离子体源和表面波等离子体处理装置
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Application No.: US14373589Application Date: 2012-12-14
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Publication No.: US09520272B2Publication Date: 2016-12-13
- Inventor: Taro Ikeda , Hiroyuki Miyashita , Yuki Osada , Yutaka Fujino , Tomohito Komatsu
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Priority: JP2012-015092 20120127; JP2012-204568 20120918
- International Application: PCT/JP2012/082496 WO 20121214
- International Announcement: WO2013/111474 WO 20130801
- Main IPC: H01Q1/26
- IPC: H01Q1/26 ; H01J37/32 ; H05H1/46

Abstract:
A microwave emission mechanism includes: a transmission path through which a microwave is transmitted; and an antenna section that emits into a chamber the microwave transmitted through the transmission path. The antenna section includes an antenna having a slot through which the microwave is emitted, a dielectric member through which the microwave emitted from the antenna is transmitted and a closed circuit in which a surface current and a displacement current flow. A surface wave is formed in a surface of the dielectric member. The closed circuit has at least: an inner wall of the slot; and the surface and an inner portion of the dielectric member. When a wavelength of the microwave is λ0, a length of the closed circuit is nλ0±δ, where n is a positive integer and δ is a fine-tuning component including 0.
Public/Granted literature
- US20140361684A1 MICROWAVE EMISSION MECHANISM, MICROWAVE PLASMA SOURCE AND SURFACE WAVE PLASMA PROCESSING APPARATUS Public/Granted day:2014-12-11
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