Invention Grant
US09520288B2 Semiconductor device including IGZO layer and manufacturing method thereof
有权
包括IGZO层的半导体装置及其制造方法
- Patent Title: Semiconductor device including IGZO layer and manufacturing method thereof
- Patent Title (中): 包括IGZO层的半导体装置及其制造方法
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Application No.: US14723981Application Date: 2015-05-28
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Publication No.: US09520288B2Publication Date: 2016-12-13
- Inventor: Akiharu Miyanaga , Junichiro Sakata , Masayuki Sakakura , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2009-219128 20090924
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/02 ; H01L29/24 ; H01L29/04 ; H01L21/477 ; H01L29/786 ; H01L29/66
Abstract:
It is an object to provide a thin film transistor having favorable electric characteristics and high reliability and a semiconductor device which includes the thin film transistor as a switching element. An In—Ga—Zn—O-based film having an incubation state that shows an electron diffraction pattern, which is different from a conventionally known amorphous state where a halo shape pattern appears and from a conventionally known crystal state where a spot appears clearly, is formed. The In—Ga—Zn—O-based film having an incubation state is used for a channel formation region of a channel etched thin film transistor.
Public/Granted literature
- US20150340506A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-11-26
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