Invention Grant
- Patent Title: Method for producing mechanically flexible silicon substrate
- Patent Title (中): 生产机械柔性硅衬底的方法
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Application No.: US14238526Application Date: 2012-08-15
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Publication No.: US09520293B2Publication Date: 2016-12-13
- Inventor: Muhammad M. Hussain , Jhonathan P. Rojas
- Applicant: Muhammad M. Hussain , Jhonathan P. Rojas
- Applicant Address: SA Thuwal
- Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Current Assignee: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: SA Thuwal
- Agency: Norton Rose Fulbright US LLP
- International Application: PCT/US2012/050847 WO 20120815
- International Announcement: WO2013/025748 WO 20130221
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/336 ; H01L21/70 ; H01L21/76 ; H01L21/302 ; H01L21/306 ; H01L23/00

Abstract:
A method for making a mechanically flexible silicon substrate is disclosed. In one embodiment, the method includes providing a silicon substrate. The method further includes forming a first etch stop layer in the silicon substrate and forming a second etch stop layer in the silicon substrate. The method also includes forming one or more trenches over the first etch stop layer and the second etch stop layer. The method further includes removing the silicon substrate between the first etch stop layer and the second etch stop layer.
Public/Granted literature
- US20140239459A1 METHOD FOR PRODUCING MECHANICALLY FLEXIBLE SILICON SUBSTRATE Public/Granted day:2014-08-28
Information query
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