Invention Grant
- Patent Title: Microelectronic packages having trench vias and methods for the manufacture thereof
- Patent Title (中): 具有沟槽通孔的微电子封装及其制造方法
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Application No.: US13610488Application Date: 2012-09-11
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Publication No.: US09520323B2Publication Date: 2016-12-13
- Inventor: Michael B Vincent , Zhiwei Gong , Scott M Hayes , Douglas G Mitchell
- Applicant: Michael B Vincent , Zhiwei Gong , Scott M Hayes , Douglas G Mitchell
- Applicant Address: US TX Austin
- Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee: FREESCALE SEMICONDUCTOR, INC.
- Current Assignee Address: US TX Austin
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L21/768 ; H01L23/528 ; H01L23/00 ; H01L23/485 ; H01L23/525

Abstract:
Embodiments of a microelectronic package including at least one trench via are provided, as are embodiments of a method for fabricating such a microelectronic package. In one embodiment, the method includes the step of depositing a dielectric layer over a first microelectronic device having a plurality of contact pads, which are covered by the dielectric layer. A trench via is formed in the dielectric layer to expose the plurality of contact pads therethrough. The trench via is formed to include opposing crenulated sidewalls having a plurality of recesses therein. The plurality of contact pads exposed through the trench via are then sputter etched. A plurality of interconnect lines is formed over the dielectric layer, each of which is electrically coupled to a different one of the plurality of contact pads.
Public/Granted literature
- US20140070415A1 MICROELECTRONIC PACKAGES HAVING TRENCH VIAS AND METHODS FOR THE MANUFACTURE THEREOF Public/Granted day:2014-03-13
Information query
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