Invention Grant
US09520323B2 Microelectronic packages having trench vias and methods for the manufacture thereof 有权
具有沟槽通孔的微电子封装及其制造方法

Microelectronic packages having trench vias and methods for the manufacture thereof
Abstract:
Embodiments of a microelectronic package including at least one trench via are provided, as are embodiments of a method for fabricating such a microelectronic package. In one embodiment, the method includes the step of depositing a dielectric layer over a first microelectronic device having a plurality of contact pads, which are covered by the dielectric layer. A trench via is formed in the dielectric layer to expose the plurality of contact pads therethrough. The trench via is formed to include opposing crenulated sidewalls having a plurality of recesses therein. The plurality of contact pads exposed through the trench via are then sputter etched. A plurality of interconnect lines is formed over the dielectric layer, each of which is electrically coupled to a different one of the plurality of contact pads.
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