Invention Grant
- Patent Title: Fully-depleted silicon-on-insulator transistors
- Patent Title (中): 完全耗尽的绝缘体上硅晶体管
-
Application No.: US14882871Application Date: 2015-10-14
-
Publication No.: US09520329B2Publication Date: 2016-12-13
- Inventor: Terence B. Hook , Horacio Mendez
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotskowski Safran & Cole, P.C.
- Agent Steven Meyers; Andrew M. Calderon
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L21/00 ; H01L21/76 ; H01L21/84 ; H01L27/092 ; H01L21/326 ; H01L21/8234 ; H01L29/36 ; H01L29/06 ; H01L21/8238
Abstract:
A fully-depleted silicon-on-insulator (FDSOI) semiconductor structure includes: a first PFET, a second PFET, and a third PFET each having a different threshold voltage and each being over an n-well that is biased to a first voltage; and a first NFET, a second NFET, and a third NFET each having a different threshold voltage and each being over a p-type substrate that is biased to a second voltage. The second voltage is different than the first voltage.
Public/Granted literature
- US20160079127A1 FULLY-DEPLETED SILICON-ON-INSULATOR TRANSISTORS Public/Granted day:2016-03-17
Information query
IPC分类:
