Invention Grant
- Patent Title: Integrated structure with improved heat dissipation
- Patent Title (中): 具有改善散热性能的集成结构
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Application No.: US14155007Application Date: 2014-01-14
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Publication No.: US09520334B2Publication Date: 2016-12-13
- Inventor: Laurent-Luc Chapelon , Pascal Ancey , Sandrine Lhostis
- Applicant: STMicroelectronics SA , STMicroelectronics (Crolles 2) SAS , Anne Lombardot
- Applicant Address: FR Crolles FR Montrouge
- Assignee: STMICROELECTRONICS (CROLLES 2) SAS,STMICROELECTRONICS SA
- Current Assignee: STMICROELECTRONICS (CROLLES 2) SAS,STMICROELECTRONICS SA
- Current Assignee Address: FR Crolles FR Montrouge
- Agency: Gardere Wynne Sewell, LLP
- Priority: FR1350770 20130130
- Main IPC: H01L23/34
- IPC: H01L23/34 ; H01L23/36 ; H01L23/427 ; H01L23/433 ; H01L25/065 ; H01L23/31 ; H01L23/48 ; H01L29/06
Abstract:
An integrated structure includes a support supporting at least one chip and a heat dissipating housing, attached to the chip. The housing is thermally conductive and has a thermal expansion compatible with the chip. The housing may further including closed cavities filled with a phase change material.
Public/Granted literature
- US20140210071A1 INTEGRATED STRUCTURE WITH IMPROVED HEAT DISSIPATION Public/Granted day:2014-07-31
Information query
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