Invention Grant
- Patent Title: Chip comprising a phase change material based protecting device and a method of manufacturing the same
- Patent Title (中): 包含基于相变材料的保护装置的芯片及其制造方法
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Application No.: US14996566Application Date: 2016-01-15
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Publication No.: US09520366B2Publication Date: 2016-12-13
- Inventor: Yann Lamy , Luca Perniola
- Applicant: Commissariat a L'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Paris
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
- Current Assignee Address: FR Paris
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1550329 20150115
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/528 ; H01L27/24 ; H01L49/02

Abstract:
An electronic chip including an integrated circuit arranged a face of a substrate, and a protection device arranged partially facing the integrated circuit is provided. The protection device includes a capacitor having a first electrode and a second electrode between which a layer of phase change material is disposed changing locally from a first resistive state to a second resistive state different from the first state by penetration of a beam. The first state is an amorphous state wherein the capacitor has a first capacitance and/or a first resistance and the second state is a crystalline state wherein the capacitor has a second capacitance and/or a second resistance different from the first capacitance and first resistance. The protection device is electrically connected to the integrated circuit by at least one of the first or second electrodes so that the integrated circuit measures the resistance and/or capacitance of the capacitor.
Public/Granted literature
- US20160211230A1 CHIP COMPRISING A PHASE CHANGE MATERIAL BASED PROTECTING DEVICE AND A METHOD OF MANUFACTURING THE SAME Public/Granted day:2016-07-21
Information query
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