Invention Grant
- Patent Title: Solid state imaging apparatus, production method thereof and electronic device
- Patent Title (中): 固态成像装置及其制造方法及电子装置
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Application No.: US14319941Application Date: 2014-06-30
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Publication No.: US09520430B2Publication Date: 2016-12-13
- Inventor: Kyohei Mizuta , Tomokazu Ohchi , Yohei Chiba
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sheridan Ross P.C.
- Priority: JP2013-141762 20130705; JP2014-056608 20140319
- Main IPC: H01L31/0232
- IPC: H01L31/0232 ; H01L27/146

Abstract:
A solid state imaging apparatus includes an insulation structure formed of an insulation substance penetrating through at least a silicon layer at a light receiving surface side, the insulation structure having a forward tapered shape where a top diameter at an upper portion of the light receiving surface side of the silicon layer is greater than a bottom diameter at a bottom portion of the silicon layer. Also, there are provided a method of producing the solid state imaging apparatus and an electronic device including the solid state imaging apparatus.
Public/Granted literature
- US20150008555A1 SOLID STATE IMAGING APPARATUS, PRODUCTION METHOD THEREOF AND ELECTRONIC DEVICE Public/Granted day:2015-01-08
Information query
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