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US09520445B2 Integrated non-volatile memory elements, design and use 有权
集成的非易失性存储元件,设计和使用

Integrated non-volatile memory elements, design and use
Abstract:
Various embodiments describe an integrated non-volatile component. The component may include a surface contact with associated mating contact wherein a ferroelectric layer is used as a conductive channel having variable conductivity and the surface contact and/or the associated mating contact are/is embodied as a rectifying contact and, as a result of an applied voltage between the surface contact and the associated mating contact, a non-volatile space charge zone forms in the surface contact terminal region and/or mating contact terminal region in the ferroelectric layer.
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