Invention Grant
- Patent Title: Integrated non-volatile memory elements, design and use
- Patent Title (中): 集成的非易失性存储元件,设计和使用
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Application No.: US14131956Application Date: 2012-07-12
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Publication No.: US09520445B2Publication Date: 2016-12-13
- Inventor: Heidemarie Schmidt , Yao Shuai , Shengqiang Zhou , Ilona Skorupa , Xin Ou , Nan Du , Christian Mayr , Wenbo Luo
- Applicant: Heidemarie Schmidt , Yao Shuai , Shengqiang Zhou , Ilona Skorupa , Xin Ou , Nan Du , Christian Mayr , Wenbo Luo
- Applicant Address: DE Dresden
- Assignee: HELMHOLTZ-ZENTRUM DRESDEN-ROSSENDORF E. V.
- Current Assignee: HELMHOLTZ-ZENTRUM DRESDEN-ROSSENDORF E. V.
- Current Assignee Address: DE Dresden
- Agency: Viering, Jentschura & Partner mbB
- Priority: DE102011051767 20110712; DE102012102326 20120320; DE102012104425 20120523
- International Application: PCT/DE2012/200047 WO 20120712
- International Announcement: WO2013/017131 WO 20130207
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L45/00 ; H01L31/0224 ; H01L31/032 ; H01L31/0368 ; H01L31/09 ; H01G7/06 ; H01L27/24 ; H01L29/43 ; G06N3/063

Abstract:
Various embodiments describe an integrated non-volatile component. The component may include a surface contact with associated mating contact wherein a ferroelectric layer is used as a conductive channel having variable conductivity and the surface contact and/or the associated mating contact are/is embodied as a rectifying contact and, as a result of an applied voltage between the surface contact and the associated mating contact, a non-volatile space charge zone forms in the surface contact terminal region and/or mating contact terminal region in the ferroelectric layer.
Public/Granted literature
- US20140312400A1 INTEGRATED NON-VOLATILE MEMORY ELEMENTS, DESIGN AND USE Public/Granted day:2014-10-23
Information query
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