Invention Grant
US09520466B2 Vertical gate-all-around field effect transistors and methods of forming same
有权
垂直栅极全方位场效应晶体管及其形成方法
- Patent Title: Vertical gate-all-around field effect transistors and methods of forming same
- Patent Title (中): 垂直栅极全方位场效应晶体管及其形成方法
-
Application No.: US14659262Application Date: 2015-03-16
-
Publication No.: US09520466B2Publication Date: 2016-12-13
- Inventor: Martin Christopher Holland , Blandine Duriez , Mark van Dal
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/06 ; H01L27/088 ; H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L29/20 ; H01L29/423 ; H01L21/8252
Abstract:
Semiconductor devices and methods of forming the same are provided. A template layer is formed on a substrate, the template layer having a recess therein. A plurality of nanowires is formed in the recess. A gate stack is formed over the substrate, the gate stack surrounding the plurality of nanowires.
Public/Granted literature
- US20160276433A1 Field Effect Transistors and Methods of Forming Same Public/Granted day:2016-09-22
Information query
IPC分类:
