Invention Grant
- Patent Title: Growth of cubic crystalline phase strucure on silicon substrates and devices comprising the cubic crystalline phase structure
- Patent Title (中): 在硅衬底和包含立方晶相结构的器件上生长立方晶相结构
-
Application No.: US14383833Application Date: 2013-03-15
-
Publication No.: US09520472B2Publication Date: 2016-12-13
- Inventor: Steven R. J. Brueck , Seung-Chang Lee , Christian Wetzel , Theeradetch Detchprohm , Christoph Stark
- Applicant: STC.UNM
- Applicant Address: US NM Albuquerque
- Assignee: STC.UNM
- Current Assignee: STC.UNM
- Current Assignee Address: US NM Albuquerque
- Agency: MH2 Technology Law Group LLP
- International Application: PCT/US2013/032613 WO 20130315
- International Announcement: WO2013/165620 WO 20131107
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/06 ; H01L29/20 ; H01L33/16 ; H01L33/24 ; H01L29/15
Abstract:
A semiconductor device is disclosed. The semiconductor device includes a substrate comprising a groove. A buffer layer is formed on a surface of the groove. The buffer layer comprising at least one material chosen from AIN, GaN or AlxGa1-xN, where x is between zero and one. An epitaxially grown semiconductor material is disposed over the buffer layer, at least a portion of the epitaxially grown semiconductor material having a cubic crystalline phase structure. Methods of forming the semiconductor devices are also taught.
Public/Granted literature
Information query
IPC分类:
