Invention Grant
- Patent Title: Capacitor-referenced temperature sensing
- Patent Title (中): 电容参考温度传感
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Application No.: US14927864Application Date: 2015-10-30
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Publication No.: US09523615B1Publication Date: 2016-12-20
- Inventor: Michael H. Perrott , Shungneng Lee
- Applicant: SiTime Corporation
- Applicant Address: US CA Santa Clara
- Assignee: SiTime Corporation
- Current Assignee: SiTime Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Charles Shemwell
- Main IPC: G01K7/16
- IPC: G01K7/16 ; G01K7/34 ; G01K7/22
Abstract:
The temperature-dependent resistance of a MEMS structure is compared with an effective resistance of a switched CMOS capacitive element to implement a high performance temperature sensor.
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