Invention Grant
- Patent Title: Flash memory cells wear reduction
- Patent Title (中): 闪存单元磨损减少
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Application No.: US14860949Application Date: 2015-09-22
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Publication No.: US09524790B1Publication Date: 2016-12-20
- Inventor: Avi Steiner , Hanan Weingarten , Erez Sabbag
- Applicant: AVAGO TECHNOLOGIES GENERAL IP (SINGAPORE) PTE. LTD.
- Applicant Address: SG Singapore
- Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee: Avago Technologies General IP (Singapore) Pte. Ltd.
- Current Assignee Address: SG Singapore
- Main IPC: G11C16/28
- IPC: G11C16/28 ; G11C16/10 ; G11C16/08 ; G11C16/14 ; G11C16/34 ; G06F11/10 ; G11C29/52

Abstract:
A method for wear reduction of a flash memory module, the method may include reading data stored in a group of flash memory cells to provide a read data; wherein the reading comprise supplying a bias voltage that is lower than a write bias voltage; wherein the write bias voltage was supplied to the group of flash memory cells during a writing of the data to the group of flash memory cells; and decoding the read data, by applying a decoding process of a given complexity, to provide decoded data.
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