Invention Grant
- Patent Title: MIM capacitor
- Patent Title (中): MIM电容器
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Application No.: US14959396Application Date: 2015-12-04
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Publication No.: US09525022B2Publication Date: 2016-12-20
- Inventor: Zhongshan Hong
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation
- Applicant Address: CN Shanghai
- Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Current Assignee Address: CN Shanghai
- Agency: Anova Law Group, PLLC
- Priority: CN201210492190 20121127
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L27/108 ; H01L29/76 ; H01L49/02 ; H01L21/768 ; H01L21/762 ; H01L23/522

Abstract:
Various embodiments provide an MIM capacitor and fabrication method thereof. An exemplary MIM capacitor can include a dielectric layer disposed over a substrate containing a conductive layer. The dielectric layer can include a groove to expose the conductive layer in the substrate. A first metal layer can be disposed on a bottom surface and a bottom portion of a sidewall surface of the groove. A top surface of the first metal layer on the sidewall surface of the groove can be lower than a top surface of the dielectric layer. A dielectric material layer can be disposed on the first metal layer and on a top portion of the sidewall surface of the groove. A second metal layer can be disposed on the dielectric material layer; and a third metal layer can be disposed on the second metal layer to fill the groove.
Public/Granted literature
- US20160087029A1 MIM CAPACITOR Public/Granted day:2016-03-24
Information query
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