Invention Grant
US09525029B2 Insulated gate bipolar transistor device, semiconductor device and method for forming said devices
有权
绝缘栅双极晶体管器件，半导体器件和用于形成所述器件的方法
- Patent Title: Insulated gate bipolar transistor device, semiconductor device and method for forming said devices
- Patent Title (中): 绝缘栅双极晶体管器件，半导体器件和用于形成所述器件的方法
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Application No.: US14737984Application Date: 2015-06-12
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Publication No.: US09525029B2Publication Date: 2016-12-20
- Inventor: Christian Philipp Sandow , Franz Josef Niedernostheide , Vera van Treek
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102014108913 20140625
- Main IPC: H01L29/739
- IPC: H01L29/739 ; H01L29/10 ; H01L29/06 ; H01L29/423
Abstract:
An insulated gate bipolar transistor device includes a semiconductor substrate having a drift region of an insulated gate bipolar transistor structure. Further, the insulated gate bipolar transistor device includes a first nanowire structure and a first gate structure. The first nanowire structure of the insulated gate bipolar transistor structure is connected to the drift region, and the first gate structure of the insulated gate bipolar transistor structure extends along at least a part of the first nanowire structure.
Public/Granted literature
- US20150380533A1 Insulated Gate Bipolar Transistor Device, Semiconductor Device and Method for Forming Said Devices Public/Granted day:2015-12-31
Information query
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