Invention Grant
- Patent Title: Semiconductor device and method of manufacturing a semiconductor device
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14612344Application Date: 2015-02-03
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Publication No.: US09525043B2Publication Date: 2016-12-20
- Inventor: Peter Irsigler , Hans-Joachim Schulze
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/223 ; H01L29/06 ; H01L29/78 ; H01L29/08 ; H01L29/10
Abstract:
A method of manufacturing a semiconductor device includes forming a trench in a semiconductor body. The method further includes doping a part of the semiconductor body via sidewalls of the trench by plasma doping.
Public/Granted literature
- US20150147856A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2015-05-28
Information query
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