Invention Grant
- Patent Title: Metal gate stack structure and manufacturing method
- Patent Title (中): 金属栅堆叠结构及制造方法
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Application No.: US14631829Application Date: 2015-02-25
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Publication No.: US09525046B2Publication Date: 2016-12-20
- Inventor: Fumitake Mieno
- Applicant: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION
- Applicant Address: CN Shanghai
- Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee: Semiconductor Manufacturing International (Shanghai) Corporation
- Current Assignee Address: CN Shanghai
- Agency: Kilpatrick Townsend and Stockton LLP
- Priority: CN201410098617 20140317
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/10 ; H01L29/66 ; H01L29/786 ; H01L27/146 ; H01L31/105 ; H01L29/49
Abstract:
A gate electrode and method for manufacturing the same includes an amorphous gate metal layer. The amorphous gate metal layer includes an amorphous metal alloy material layer having at least two metallic elements of an amorphous material or an amorphous metal compound material layer having at least one metallic element and at least one non-metallic element selected from the IIIA group, the IVA group, and the VA group of the Periodic Table. The atoms are arranged evenly in the amorphous gate metal layer, there is no noticeable grains and grain boundaries, so that no defects will be generated through a carrier recombination, and the carrier mobility is increased and the carrier can be uniformly distributed.
Public/Granted literature
- US20150364563A1 METAL GATE STACK STRUCTURE AND MANUFACTURING METHOD Public/Granted day:2015-12-17
Information query
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