Invention Grant
US09525052B2 Active area shaping of III-nitride devices utilizing a field plate defined by a dielectric body
有权
使用由电介质体限定的场板的III族氮化物器件的有源面积成形
- Patent Title: Active area shaping of III-nitride devices utilizing a field plate defined by a dielectric body
- Patent Title (中): 使用由电介质体限定的场板的III族氮化物器件的有源面积成形
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Application No.: US14081869Application Date: 2013-11-15
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Publication No.: US09525052B2Publication Date: 2016-12-20
- Inventor: Michael A. Briere
- Applicant: International Rectifier Corporation
- Applicant Address: US CA El Segundo
- Assignee: Infineon Technologies Americas Corp.
- Current Assignee: Infineon Technologies Americas Corp.
- Current Assignee Address: US CA El Segundo
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/28 ; H01L29/423 ; H01L29/66 ; H01L29/40 ; H01L29/20 ; H01L29/51
Abstract:
In an exemplary implementation, a III-nitride semiconductor device includes a III-nitride heterojunction including a first III-nitride body situated over a second III-nitride body to form a two-dimensional electron gas. The III-nitride semiconductor device further includes a gate well formed in a dielectric body, the dielectric body situated over the III-nitride heterojunction. The III-nitride semiconductor device also includes a gate arrangement situated in the gate well and including a gate electrode and a field plate. The field plate includes at least two steps, the at least two steps being defined in the dielectric body.
Public/Granted literature
- US20140097471A1 Active Area Shaping of III-Nitride Devices Utilizing A Field Plate Defined By A Dielectric Body Public/Granted day:2014-04-10
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