Invention Grant
- Patent Title: Semiconductor device and method of formation
- Patent Title (中): 半导体器件及其形成方法
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Application No.: US14455992Application Date: 2014-08-11
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Publication No.: US09525072B2Publication Date: 2016-12-20
- Inventor: Meng-Yu Lin , Shih-Yen Lin , Si-Chen Lee
- Applicant: Taiwan Semiconductor Manufacturing Company Limited , National Taiwan University
- Applicant Address: TW Hsin-Chu TW Taipei
- Assignee: Taiwan Semiconductor Manufacturing Company Limited,National Taiwan University
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited,National Taiwan University
- Current Assignee Address: TW Hsin-Chu TW Taipei
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L29/16 ; H01L29/423 ; H01L29/49 ; H01L29/66
Abstract:
A semiconductor device and method of formation are provided. The semiconductor device includes a substrate, a first active area over the substrate, a second active area over the substrate, a graphene channel between the first active area and the second active area, and a first in-plane gate. In some embodiments, the graphene channel, the first in-plane gate, the first active area, and the second active area include graphene. A method of forming the first in-plane gate, the first active area, the second active area, and the graphene channel from a single layer of graphene is also provided.
Public/Granted literature
- US20160043235A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMATION Public/Granted day:2016-02-11
Information query
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