Invention Grant
- Patent Title: Tunable device having a FET integrated with a BJT
- Patent Title (中): 具有与BJT集成的FET的可调谐装置
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Application No.: US14709780Application Date: 2015-05-12
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Publication No.: US09525078B2Publication Date: 2016-12-20
- Inventor: Bin Li , Peter J. Zampardi, Jr. , Andre G. Metzger
- Applicant: Skyworks Solutions, Inc.
- Applicant Address: US MA Woburn
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US MA Woburn
- Agency: Knobbe Martens Olson & Bear LLP
- Main IPC: H01L29/93
- IPC: H01L29/93 ; H01L21/8249 ; H01L27/06 ; H01L27/08 ; H01L29/94 ; H03J3/18
Abstract:
A device includes a field effect transistor (FET) integrated with at least a portion of a bipolar junction transistor (BJT), in which a back gate of the FET shares an electrical connection with a base of the BJT, and in which a reverse voltage can be applied to the back gate of the FET.
Public/Granted literature
- US20150318406A1 CONTINUOUS TUNABLE LC RESONATOR USING A FET AS A VARACTOR Public/Granted day:2015-11-05
Information query
IPC分类:
