Invention Grant
- Patent Title: Radio frequency semiconductor switch
- Patent Title (中): 射频半导体开关
-
Application No.: US14557503Application Date: 2014-12-02
-
Publication No.: US09525415B2Publication Date: 2016-12-20
- Inventor: Toshiki Seshita
- Applicant: KABUSHUKI KAISHA TOSHIBA
- Applicant Address: JP Tokyo
- Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee: KABUSHIKI KAISHA TOSHIBA
- Current Assignee Address: JP Tokyo
- Agency: Posz Law Group, PLC
- Priority: JP2011-189411 20110831; JP2011-272109 20111213
- Main IPC: H03K17/00
- IPC: H03K17/00 ; H03K17/693 ; H04B1/48

Abstract:
According to one embodiment, a semiconductor switch includes a power supply, a driver, a switch section, and a first potential controller. The power supply includes a first potential generator and a second potential generator. The first potential generator is configured to generate a negative first potential. The second potential generator is configured to generate a positive second potential that a power supply potential is stepped down. The driver is supplied with the first potential and a third potential and configured to output at least one of the first potential and the third potential based on a terminal switching signal. The switch section is configured to connect a common terminal to any one of a plurality of radio frequency terminals according to an output of the driver. The first potential controller includes a divider and an amplifier.
Public/Granted literature
- US20150109032A1 SEMICONDUCTOR SWITCH AND WIRELESS DEVICE Public/Granted day:2015-04-23
Information query