Invention Grant
- Patent Title: High speed electroplating metallic conductors
- Patent Title (中): 高速电镀金属导体
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Application No.: US15002342Application Date: 2016-01-20
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Publication No.: US09530653B2Publication Date: 2016-12-27
- Inventor: Uri Cohen
- Applicant: Uri Cohen
- Main IPC: C25D5/08
- IPC: C25D5/08 ; H01L21/77 ; H01L21/288 ; C25D5/02 ; H01L21/768 ; H05K3/42 ; C25D7/12 ; C25D21/10 ; H01L23/522 ; H05K3/06 ; H05K3/10 ; H01L23/48 ; H01L21/321 ; H01L23/532

Abstract:
One embodiment is a method for producing void-free electroplated metallic conductors inside openings by electrochemical deposition (ECD), said method including steps of: forming at least one opening in a substrate, said at least one opening having an aspect ratio in a range from 8:1 to 28:1; forming at least one barrier layer over the sidewalls of the at least one opening; depositing at least one seed layer over the at least one barrier layer; immersing the substrate in an electrolyte contained in an ECD cell, the ECD cell including at least one anode and a cathode, wherein the electrolyte includes plating metallic ions and at least one inhibitor additive; providing agitation of the electrolyte across the surface of the substrate by moving multiple non-contacting wiping blades relative to the substrate, wherein the agitation facilitates a limiting current density larger by at least an order of magnitude than a limiting current density without the agitation; and applying an average electroplating current density on the substrate, wherein the agitation, the concentrations of the metallic ions and the inhibitor additive, and the average electroplating current density are such as to produce void-free, electroplated metallic filling inside the at least one opening.
Public/Granted literature
- US20160141178A1 High Speed Electroplating Metallic Conductors Public/Granted day:2016-05-19
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