Invention Grant
- Patent Title: Monolithic integration of CMOS and non-silicon devices
- Patent Title (中): CMOS和非硅器件的整体集成
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Application No.: US14390560Application Date: 2013-04-04
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Publication No.: US09530763B2Publication Date: 2016-12-27
- Inventor: Eugene A. Fitzgerald
- Applicant: Massachusetts Institute of Technology
- Applicant Address: US MA Cambridge
- Assignee: Massachusetts Institute of Technology
- Current Assignee: Massachusetts Institute of Technology
- Current Assignee Address: US MA Cambridge
- Agency: Wolf, Greenfield & Sacks, P.C.
- International Application: PCT/US2013/035249 WO 20130404
- International Announcement: WO2013/152176 WO 20131010
- Main IPC: H01L25/00
- IPC: H01L25/00 ; H01L21/762 ; H01L21/8258
Abstract:
A method includes attaching a partially processed CMOS wafer to a second wafer to produce a combined wafer. The second wafer comprises a first region including a material different from silicon. The method also includes forming devices in the first region or in a second region of the combined wafer having a material different from silicon.
Public/Granted literature
- US20150099328A1 MONOLITHIC INTEGRATION OF CMOS AND NON-SILICON DEVICES Public/Granted day:2015-04-09
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