Invention Grant
- Patent Title: Semiconductor arrangement with active drift zone
- Patent Title (中): 具有主动漂移区的半导体装置
-
Application No.: US14372774Application Date: 2013-01-30
-
Publication No.: US09530764B2Publication Date: 2016-12-27
- Inventor: Rolf Weis , Michael Treu , Gerald Deboy , Armin Willmeroth , Hans Weber
- Applicant: Infineon Technologies Dresden GmbH
- Applicant Address: DE Dresden
- Assignee: Infineon Technologies Dresden GmbH
- Current Assignee: Infineon Technologies Dresden GmbH
- Current Assignee Address: DE Dresden
- Agency: Murphy, Bilak & Homiller, PLLC
- International Application: PCT/EP2013/051827 WO 20130130
- International Announcement: WO2013/113771 WO 20130808
- Main IPC: H01L27/00
- IPC: H01L27/00 ; H01L27/02 ; H01L21/84 ; H01L27/06 ; H01L27/088 ; H01L27/12 ; H03K17/06 ; H03K17/10 ; H01L29/423 ; H01L29/78

Abstract:
A semiconductor device arrangement includes a first semiconductor device having a load path and a plurality of second semiconductor devices, each having a load path between a first and a second load terminal and a control terminal. The second semiconductor devices have their load paths connected in series and connected in series to the load path of the first semiconductor device. Each of the second semiconductor devices has its control terminal connected to the load terminal of one of the other second semiconductor devices, and one of the second semiconductor devices has its control terminal connected to one of the load terminals of the first semiconductor device. Each of the second semiconductor devices has at least one device characteristic. At least one device characteristic of at least one of the second semiconductor devices is different from the corresponding device characteristic of others of the second semiconductor devices.
Public/Granted literature
- US20150041915A1 Semiconductor Arrangement with Active Drift Zone Public/Granted day:2015-02-12
Information query
IPC分类: