Invention Grant
- Patent Title: Photoelectric conversion device
- Patent Title (中): 光电转换装置
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Application No.: US14976718Application Date: 2015-12-21
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Publication No.: US09530810B2Publication Date: 2016-12-27
- Inventor: Fumiyasu Utsunomiya
- Applicant: Seiko Instruments Inc.
- Applicant Address: JP Chiba
- Assignee: SII SEMICONDUCTOR CORPORATION
- Current Assignee: SII SEMICONDUCTOR CORPORATION
- Current Assignee Address: JP Chiba
- Agency: Brinks Gilson & Lione
- Priority: JP2014-262943 20141225
- Main IPC: H01L27/15
- IPC: H01L27/15 ; H01L31/12 ; H01L33/00 ; H01L27/146

Abstract:
To provide a photoelectric conversion device which prevents a reset time from being made long when a large quantity of light is entered. There is provided a photoelectric conversion device equipped with a photodiode which causes a photoelectric current corresponding to a quantity of incident light to flow, a reset circuit which charges a parasitic capacitance of the photodiode to a reset voltage, a voltage limit circuit which prevents the voltage of the parasitic capacitance of the photodiode from being lower than a prescribed voltage, and an output circuit which outputs the voltage of the parasitic capacitance of the photodiode.
Public/Granted literature
- US20160190189A1 PHOTOELECTRIC CONVERSION DEVICE Public/Granted day:2016-06-30
Information query
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