Invention Grant
- Patent Title: Method of manufacturing transistor and semiconductor device including the same
- Patent Title (中): 制造晶体管的方法和包括其的半导体器件
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Application No.: US14790529Application Date: 2015-07-02
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Publication No.: US09530848B2Publication Date: 2016-12-27
- Inventor: Moon Sik Seo
- Applicant: SK hynix inc.
- Applicant Address: KR Icheon-Si
- Assignee: SK HYNIX INC.
- Current Assignee: SK HYNIX INC.
- Current Assignee Address: KR Icheon-Si
- Agency: William Park & Associates Ltd.
- Priority: KR10-2013-0132087 20131101
- Main IPC: H01L21/28
- IPC: H01L21/28 ; H01L29/423 ; H01L27/115 ; H01L29/66 ; H01L29/792 ; H01L29/32 ; H01L29/788
Abstract:
Provided is a semiconductor device including a pillar, a gate electrode having a first conductive pattern surrounding the pillar and a plurality of second conductive patterns which protrude from the first conductive pattern and are arranged to be spaced apart from each other, and an insulating pattern interposed between the pillar and the first conductive pattern.
Public/Granted literature
- US20150303269A1 TRANSISTOR AND SEMICONDUCTOR DEVICE INCLUDING THE SAME Public/Granted day:2015-10-22
Information query
IPC分类:
