Invention Grant
US09530857B2 Electronic device, assembly and methods of manufacturing an electronic device including a vertical trench capacitor and a vertical interconnect 有权
电子设备,组装和制造包括垂直沟槽电容器和垂直互连的电子设备的方法

Electronic device, assembly and methods of manufacturing an electronic device including a vertical trench capacitor and a vertical interconnect
Abstract:
A semiconductor substrate comprises both vertical interconnects and vertical capacitors with a common dielectric layer. The substrate can be suitably combined with further devices to form an assembly. The substrate can be made in etching treatments including a first step on the one side, and then a second step on the other side of the substrate.
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