Invention Grant
- Patent Title: III-V MOSFETs with halo-doped bottom barrier layer
- Patent Title (中): 具有卤素掺杂底部阻挡层的III-V MOSFET
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Application No.: US14578768Application Date: 2014-12-22
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Publication No.: US09530860B2Publication Date: 2016-12-27
- Inventor: Pranita Kerber , Chung-Hsun Lin , Amlan Majumdar , Jeffrey W. Sleight
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: Globalfoundries, Inc.
- Current Assignee: Globalfoundries, Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Anthony Canale
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66
Abstract:
Techniques for controlling short channel effects in III-V MOSFETs through the use of a halo-doped bottom (III-V) barrier layer are provided. In one aspect, a method of forming a MOSFET device is provided. The method includes the steps of: forming a III-V barrier layer on a substrate; forming a III-V channel layer on a side of the III-V barrier layer opposite the substrate, wherein the III-V barrier layer is configured to confine charge carriers in the MOSFET device to the III-V channel layer; forming a gate stack on a side of the III-V channel layer opposite the III-V barrier layer; and forming halo implants in the III-V barrier layer on opposite sides of the gate stack. A MOSFET device is also provided.
Public/Granted literature
- US20160181394A1 III-V MOSFETS With Halo-Doped Bottom Barrier Layer Public/Granted day:2016-06-23
Information query
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