Invention Grant
- Patent Title: Strained MOS device and methods for forming the same
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Application No.: US13962688Application Date: 2013-08-08
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Publication No.: US09530865B2Publication Date: 2016-12-27
- Inventor: Ta-Ming Kuan , Chih-Hsin Ko , Wen-Chin Lee
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L29/165
Abstract:
A semiconductor structure includes a semiconductor substrate having a top surface; a gate stack on the semiconductor substrate; and a stressor in the semiconductor substrate and adjacent the gate stack. The stressor comprises at least a first portion with a first top surface lower than the top surface of the semiconductor substrate.
Public/Granted literature
- US20130323900A1 Strained MOS Device and Methods for Forming the Same Public/Granted day:2013-12-05
Information query
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