Invention Grant
- Patent Title: Two-dimensional guard structure and a radiation detector with the same
- Patent Title (中): 二维防护结构和辐射探测器相同
-
Application No.: US13528065Application Date: 2012-06-20
-
Publication No.: US09530902B2Publication Date: 2016-12-27
- Inventor: Pasi Kostamo
- Applicant: Pasi Kostamo
- Applicant Address: FI Espoo
- Assignee: Oxford Instruments Analytical Oy
- Current Assignee: Oxford Instruments Analytical Oy
- Current Assignee Address: FI Espoo
- Agency: Wood, Phillips, Katz, Clark & Mortimer
- Main IPC: H01L31/02
- IPC: H01L31/02 ; H01L31/115 ; H01L31/0224 ; H01L29/06
Abstract:
A semiconductor device comprises a piece of semiconductor material. On a surface of said piece of semiconductor material, a number of electrodes exist and are configured to assume different electric potentials. A guard structure comprises a two-dimensional array of conductive patches, at least some of which are left to assume an electric potential under the influence of electric potentials existing at said electrodes.
Public/Granted literature
- US20130341752A1 TWO-DIMENSIONAL GUARD STRUCTURE AND A RADIATION DETECTOR WITH THE SAME Public/Granted day:2013-12-26
Information query
IPC分类:
