Invention Grant
US09530923B2 Ion implantation of dopants for forming spatially located diffusion regions of solar cells
有权
用于形成太阳能电池空间位置扩散区的掺杂剂的离子注入
- Patent Title: Ion implantation of dopants for forming spatially located diffusion regions of solar cells
- Patent Title (中): 用于形成太阳能电池空间位置扩散区的掺杂剂的离子注入
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Application No.: US13725628Application Date: 2012-12-21
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Publication No.: US09530923B2Publication Date: 2016-12-27
- Inventor: Steven E. Molesa , Timothy D. Dennis , Sheng Sun , Richard Sewell
- Applicant: SunPower Corporation
- Applicant Address: US CA San Jose
- Assignee: SunPower Corporation
- Current Assignee: SunPower Corporation
- Current Assignee Address: US CA San Jose
- Agency: Okamoto & Benedicto LLP
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L31/0352 ; H01L31/068

Abstract:
Diffusion regions of a solar cell are formed using a blanket layer of film that is doped with dopants of a first conductivity type. Dopants of a second conductivity type are implanted in select regions of the blanket layer of film to form dopant source regions of the second conductivity type. Diffusion regions of the solar cell are formed by diffusing dopants of the first conductivity type and dopants of the second conductivity type from the blanket layer of film into an underlying silicon material. The blanket layer of film may be a P-type dopant source layer doped with boron, with phosphorus being implanted in select regions of the P-type dopant source layer to form N-type dopant source regions in the P-type dopant source layer.
Public/Granted literature
- US20140174515A1 ION IMPLANTATION OF DOPANTS FOR FORMING SPATIALLY LOCATED DIFFUSION REGIONS OF SOLAR CELLS Public/Granted day:2014-06-26
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