Invention Grant
- Patent Title: Magnetoresistive element
- Patent Title (中): 磁阻元件
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Application No.: US14607487Application Date: 2015-01-28
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Publication No.: US09530958B2Publication Date: 2016-12-27
- Inventor: Hiroyuki Uchida , Masanori Hosomi , Hiroyuki Ohmori , Kazuhiro Bessho , Yutaka Higo , Kazutaka Yamane
- Applicant: Sony Corporation
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Michael Best & Friedrich LLP
- Priority: JP2014-018280 20140203
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L43/10 ; H01L43/08 ; H01L27/22

Abstract:
A magnetoresistive element includes a laminated structure including a plurality of fixed layers, an intermediate layer formed of a non-magnetic material, and a recording layer, the plurality of fixed layers being laminated via a non-magnetic layer, the plurality of fixed layers having at least a first fixed layer and a second fixed layer, the following formula being satisfied: S1>S2 (wherein S1 is an area of a portion of the first fixed layer adjacent to the intermediate layer, which faces the intermediate layer, and S2 is an area of the fixed layer having the smallest area out of the fixed layers other than the first fixed layer).
Public/Granted literature
- US20150221862A1 MAGNETORESISTIVE ELEMENT Public/Granted day:2015-08-06
Information query
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