Invention Grant
- Patent Title: Snubber circuit
- Patent Title (中): 缓冲电路
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Application No.: US14825404Application Date: 2015-08-13
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Publication No.: US09531252B2Publication Date: 2016-12-27
- Inventor: Makoto Yatsu
- Applicant: SAMSUNG SDI CO., LTD.
- Applicant Address: KR Yongin-Si, Gyeonggi-do
- Assignee: Samsung SDI Co., Ltd.
- Current Assignee: Samsung SDI Co., Ltd.
- Current Assignee Address: KR Yongin-Si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: JP2014-195335 20140925; KR10-2015-0067484 20150514
- Main IPC: H02M1/34
- IPC: H02M1/34 ; H02M7/5387 ; H02M7/538

Abstract:
A snubber circuit includes a current-variation suppressor, a voltage-variation suppressor, a retrieving circuit, and a discharging circuit. The current-variation suppressor is connected between a bridge circuit and a power supply and reduces current variation when switches in the bridge circuit are controlled. The voltage-variation suppressor is parallel to the switches and reduces voltage variation when the switches are controlled. The retrieving circuit transfers energy stored in the current-variation suppressor when the switches are controlled to the voltage-variation suppressor. The discharging circuit discharges energy stored in the voltage-variation suppressor when the switches are controlled to an AC side of the bridge circuit when the semiconductor switches are controlled.
Public/Granted literature
- US20160094118A1 SNUBBER CIRCUIT Public/Granted day:2016-03-31
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