A high-frequency module includes a lower base member having a recess part formed in an upper face thereof, and having a base metal part formed on a lower face thereof that is to be grounded, an upper substrate disposed inside the recess part of the lower base member. The high frequency module also includes a semiconductor device and a first ground metal part connected to the base metal part and disposed in the lower base member. The upper substrate has a first through hole formed therethrough at a position where the first ground metal part is situated, and the semiconductor device is placed on the first ground metal part in the first through hole.