Invention Grant
- Patent Title: Method for producing a powdery precursor material, powdery precursor material and use thereof
- Patent Title (中): 粉状前体材料的制造方法,粉状前体材料及其用途
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Application No.: US14888038Application Date: 2014-04-17
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Publication No.: US09534169B2Publication Date: 2017-01-03
- Inventor: Bianca Pohl-Klein , Juliane Kechele
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater Matsil, LLP
- Priority: DE102013105304 20130523
- International Application: PCT/EP2014/057957 WO 20140417
- International Announcement: WO2014/187624 WO 20141127
- Main IPC: C04B35/581
- IPC: C04B35/581 ; C04B35/584 ; C09K11/08 ; C09K11/77 ; H01L33/50 ; H01J31/00

Abstract:
A method can be used for producing a powdery precursor material of the following general composition I or II or III or IV: I: (CaySr1−y) AlSiN3:X1 II:(CabSraLi1−a−b) AISi (N1−cFc)3:X2 III: Z5−δAl4−2δSi8+2δN18: X3 IV: (Zi−dLid)5−δAl4−2δSi8+2δ(N1−XFX)18: X4. The method includes A) producing a powdery mixture of starting materials, wherein the starting materials comprise ions of the aforementioned compositions I and/or II and/or III and/or IV, B) annealing the mixture under a protective gas atmosphere, subsequent milling. In method step A), at least one silicon nitride having a specific area of greater than or equal to 5 m2/g and smaller than or equal to 100 m2/g is selected as starting material. The annealing in method step B) is carried out at a temperature of less than or equal to 1550° C.
Public/Granted literature
- US20160060517A1 Method for Producing a Powdery Precursor Material, Powdery Precursor Material and Use Thereof Public/Granted day:2016-03-03
Information query
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