Invention Grant
- Patent Title: Diamond producing method and DC plasma enhanced CVD apparatus
- Patent Title (中): 金刚石制造方法和DC等离子体增强CVD装置
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Application No.: US13954669Application Date: 2013-07-30
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Publication No.: US09534315B2Publication Date: 2017-01-03
- Inventor: Hitoshi Noguchi
- Applicant: Shin-Estu Chemical Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee: SHIN-ETSU CHEMICAL CO., LTD.
- Current Assignee Address: JP Tokyo
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: JP2012-174619 20120807
- Main IPC: C30B25/16
- IPC: C30B25/16 ; C23C16/517 ; C23C16/27 ; C23C16/515 ; C30B25/10 ; C30B25/18 ; C30B29/04

Abstract:
Diamond is grown on a substrate (S) from a mixture of a carbon-containing gas and hydrogen gas, by a DC plasma enhanced CVD process of applying a DC voltage between a stage electrode (12) for holding the substrate (S) and a voltage-applying electrode (13). During the step of growing diamond by applying a DC voltage, a single pulse voltage of opposite polarity to the DC voltage for diamond growth is applied between the stage electrode and the voltage-applying electrode at a predetermined timing. Diamond of quality is produced at a stable growth rate.
Public/Granted literature
- US20140041574A1 DIAMOND PRODUCING METHOD AND DC PLASMA ENHANCED CVD APPARATUS Public/Granted day:2014-02-13
Information query
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