Invention Grant
US09534317B2 Seed crystal for SiC single-crystal growth, SiC single crystal, and method of manufacturing the SiC single crystal
有权
用于SiC单晶生长的晶种，SiC单晶，以及SiC单晶的制造方法
- Patent Title: Seed crystal for SiC single-crystal growth, SiC single crystal, and method of manufacturing the SiC single crystal
- Patent Title (中): 用于SiC单晶生长的晶种，SiC单晶，以及SiC单晶的制造方法
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Application No.: US14435335Application Date: 2013-10-29
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Publication No.: US09534317B2Publication Date: 2017-01-03
- Inventor: Itaru Gunjishima , Keisuke Shigetoh , Yasushi Urakami , Akihiro Matsuse
- Applicant: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO , DENSO CORPORATION , SHOWA DENKO K.K.
- Applicant Address: JP Nagakute-shi JP Kariya-shi JP Tokyo
- Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO,DENSO CORPORATION,SHOWA DENKO K.K.
- Current Assignee: KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO,DENSO CORPORATION,SHOWA DENKO K.K.
- Current Assignee Address: JP Nagakute-shi JP Kariya-shi JP Tokyo
- Agency: Oliff PLC
- Priority: JP2012-253765 20121119
- International Application: PCT/JP2013/006389 WO 20131029
- International Announcement: WO2014/076893 WO 20140522
- Main IPC: B32B3/00
- IPC: B32B3/00 ; C30B29/36 ; C30B23/02 ; C30B19/12 ; C30B25/20 ; C30B9/00 ; C30B25/18
Abstract:
A seed crystal for SiC single-crystal growth includes a facet formation region containing a {0001}-plane uppermost portion and n (n>=3) planes provided enclosing the periphery of the facet formation region. The seed crystal for SiC single-crystal growth satisfies the relationships represented by formula (a): Bkk-1
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