Invention Grant
US09534724B2 Gas showerhead, method for making the same and thin film growth reactor
有权
气体喷头,制造相同方法和薄膜生长反应器
- Patent Title: Gas showerhead, method for making the same and thin film growth reactor
- Patent Title (中): 气体喷头,制造相同方法和薄膜生长反应器
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Application No.: US13891138Application Date: 2013-05-09
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Publication No.: US09534724B2Publication Date: 2017-01-03
- Inventor: Yong Jiang , Ning Zhou , Henry Ho , Zhiyou Du
- Applicant: Advanced Micro-Fabrication Equipment Inc, Shanghai
- Applicant Address: CN Shanghai
- Assignee: ADVANCED MICRO-FABRICATION EQUIPMENT INC, SHANGHAI
- Current Assignee: ADVANCED MICRO-FABRICATION EQUIPMENT INC, SHANGHAI
- Current Assignee Address: CN Shanghai
- Agency: Nixon Peabody LLP
- Agent Joseph Bach, Esq.
- Priority: CN201210147710 20120511
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C30B25/14 ; F16L53/00 ; H01L21/67

Abstract:
The present application provides a gas showerhead including a gas distribution and diffusion plate and a water cooling plate, the gas distribution and diffusion plate includes several columns of first gas diffusion passages connecting to a first reactant gas source and several columns of second gas diffusion passages connecting to a second reactant gas source; the water cooling plate having cooling liquid passages is arranged below the gas distribution and diffusion plate, and the water cooling plate is provided with first gas outlet passages provided for the reactant gas in the first gas diffusion passages to flow out and second gas outlet passages provided for the reactant gas in the second gas diffusion passages to flow out, so as to isolatedly feed at least two reactant gases into a reaction chamber.
Public/Granted literature
- US20130299009A1 GAS SHOWERHEAD, METHOD FOR MAKING THE SAME AND THIN FILM GROWTH REACTOR Public/Granted day:2013-11-14
Information query
IPC分类: