Invention Grant
US09534961B2 Metal nitride material for thermistor, method for producing same, and film type thermistor sensor
有权
用于热敏电阻的金属氮化物材料，其制造方法和薄膜型热敏电阻传感器
- Patent Title: Metal nitride material for thermistor, method for producing same, and film type thermistor sensor
- Patent Title (中): 用于热敏电阻的金属氮化物材料，其制造方法和薄膜型热敏电阻传感器
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Application No.: US14469184Application Date: 2014-08-26
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Publication No.: US09534961B2Publication Date: 2017-01-03
- Inventor: Toshiaki Fujita , Hiroshi Tanaka , Noriaki Nagatomo
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Priority: JP2013-180295 20130830; JP2013-180299 20130830; JP2013-180305 20130830; JP2013-180307 20130830; JP2013-182745 20130904
- Main IPC: H01C7/10
- IPC: H01C7/10 ; G01K7/22 ; C23C14/06 ; C23C14/00 ; H01C7/04 ; H01C1/012 ; H01C7/00 ; H01C1/14
Abstract:
Provided are a metal nitride material for a thermistor, which has high reliability and high heat resistance and can be directly deposited on a film or the like without firing, a method for producing the same, and a film type thermistor sensor.The metal nitride material for a thermistor consists of a metal nitride represented by the general formula: (M1−vAv)xAly(N1−wOw)z (where “M” represents at least one element selected from Ti, V, Cr, Mn, Fe, and Co, “A” represents at least one element selected from Mn, Cu, Ni, Fe, and Co, which is different from the selected “M”, 0.0
Public/Granted literature
- US20150061821A1 METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR PRODUCING SAME, AND FILM TYPE THERMISTOR SENSOR Public/Granted day:2015-03-05
Information query
