Invention Grant
US09535010B2 Defect sampling for electron beam review based on defect attributes from optical inspection and optical review
有权
基于光学检查和光学检查的缺陷属性的电子束检查的缺陷采样
- Patent Title: Defect sampling for electron beam review based on defect attributes from optical inspection and optical review
- Patent Title (中): 基于光学检查和光学检查的缺陷属性的电子束检查的缺陷采样
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Application No.: US14709390Application Date: 2015-05-11
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Publication No.: US09535010B2Publication Date: 2017-01-03
- Inventor: Rohan Gosain , Somit Joshi
- Applicant: KLA-Tencor Corporation
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Corp.
- Current Assignee: KLA-Tencor Corp.
- Current Assignee Address: US CA Milpitas
- Agent Ann Marie Mewherter
- Main IPC: G01N21/00
- IPC: G01N21/00 ; G01N21/88 ; G06T7/00 ; G01N21/95 ; H01J37/22 ; G01N23/225 ; H01L21/66

Abstract:
Various embodiments for generating a defect sample for electron beam review are provided. One method includes combining, on a defect-by-defect basis, one or more first attributes for defects determined by optical inspection of a wafer on which the defects were detected with one or more second attributes for the defects determined by optical review of the wafer thereby generating combined attributes for the defects. The method also includes separating the defects into bins based on the combined attributes for the defects. The bins correspond to different defect classifications. In addition, the method includes sampling one or more of the defects for the electron beam review based on the bins into which the defects have been separated thereby generating a defect review sample for the electron beam review.
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