Invention Grant
- Patent Title: Method and apparatus for inspecting defect
- Patent Title (中): 检查缺陷的方法和装置
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Application No.: US13702696Application Date: 2011-05-27
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Publication No.: US09535013B2Publication Date: 2017-01-03
- Inventor: Shunichi Matsumoto , Taketo Ueno , Atsushi Taniguchi
- Applicant: Shunichi Matsumoto , Taketo Ueno , Atsushi Taniguchi
- Applicant Address: JP Tokyo
- Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee: HITACHI HIGH-TECHNOLOGIES CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Baker Botts L.L.P.
- Priority: JP2010-130910 20100608
- International Application: PCT/JP2011/062188 WO 20110527
- International Announcement: WO2011/155345 WO 20111215
- Main IPC: G01N21/95
- IPC: G01N21/95 ; G01B11/30 ; G01N21/21 ; G01N21/94 ; G01N21/956

Abstract:
In inspecting a substrate having a transparent oxide film or a metal film formed on a surface thereof by using a dark field type inspection apparatus installing a laser light source, an illuminating beam having a high coherence causes variations in reflection strength due to multiple interferences within the transparent oxide film or an interference of scattered beams due to the surface roughness of the metal film occurs and which leads to degradation in the sensitivity of defect detection. The present invention solves the problem by providing a low-coherence but high-brightness illumination using a highly directive broadband light source, and a system in which the conventional laser light source is simultaneously employed to selectively use the light sources, thereby enabling a highly sensitive inspection according to the condition of a wafer.
Public/Granted literature
- US20130114880A1 METHOD AND APPARATUS FOR INSPECTING DEFECT Public/Granted day:2013-05-09
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